Skin-like self-assembled monolayers on InAs/GaSb superlattice photodetectors
نویسندگان
چکیده
We report on the effects of monolayer (ML) thick skin-like octadecanethiol (ODT, CH3[CH2]17SH) on type-II InAs/GaSb MWIR photodetectors. Circumventing the ageing effects of conventional sulfur compounds, we use ODT, a self-assembling, long molecular chain headed with a sulfur atom. Photodiodes coated with and without the self-assembled monolayer (SAM) ODT were compared for their electrical and optical performances. For ODT-coated diodes, the dark current density was improved by two orders of magnitude at 77 K under −100 mV bias. The zero bias responsivity and detectivity were 1.04 A W−1 and 2.15 × 1013 Jones, respectively, at 4μm and 77 K. The quantum efficiency was determined to be 37% for a cutoff wavelength of 5.1μm. (Some figures may appear in colour only in the online journal)
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